Chemin:okDatasheet > Fiche de Semi-conducteurs > Leshan Radio Datasheet > Leshan Radio-4

1G00DFT HVC365 RBV401G BB142 MTZJ5.6A MTZJ12C FR107 MUN5330DW1T1 MC74VHC1GT04DFT1 1N4735B P6KE27A 1N5255D EFM106 1N978B 1N4737A MC74VHC1GT14DTT1 HER305G BAW56LT1 RB204 1N4751A MMBD301T1 HVM16 HVC308A FR303G 1N4370D 05WS30 M02 1N5256A

Leshan Radio Fiches catalogue-4

Partie nFabricantApplication
RL256 Leshan Radio800 V, 2.5 A general diode
1N960B Leshan Radio9.1 V, zener diode
MC74VHC1G00DFT Leshan Radio2-input NAND gate
HVC365 Leshan Radio15 V, variable capacitance diode
RBV401G Leshan Radio100 V, 4 A, bridge rectifier
BB142 Leshan Radio6 V, low-voltage variable capacitance diode
MTZJ5.6A Leshan Radio5.6 V, 5 mA, zener diode
MTZJ12C Leshan Radio12 V, 5 mA, zener diode
FR107 Leshan Radio1000 V, 1 A, fast recovery diode
MUN5330DW1T1 Leshan Radio50 V, dual bias resistor transistor
MC74VHC1GT04DFT1 Leshan RadioInverting buffer
1N4735B Leshan Radio6.2 V, zener diode
P6KE27A Leshan Radio27 V, 1 mA, 600 W, transient voltage suppressor
1N5255D Leshan Radio28 V, 4.5 mA, zener diode
EFM106 Leshan Radio400 V, 1 A, fast recovery SMA diode
1N978B Leshan Radio51 V, zener diode
1N4737A Leshan Radio7.5 V, zener diode
MC74VHC1GT14DTT1 Leshan RadioSchmitt-trigger inverter
HER305G Leshan Radio400 V, 3 A, high efficiency GPP diode
BAW56LT1 Leshan Radio70 V, monolithic dual switching diode
RB204 Leshan Radio400 V, 2 A, bridge rectifier
1N4751A Leshan Radio30 V, zener diode
MMBD301T1 Leshan Radio30 V, schottky barrier diode
HVM16 Leshan Radio16000 V, 350 mA, high-voltage rectifier
HVC308A Leshan Radio35 V, variable capacitance diode
FR303G Leshan Radio200 V, 3 A, fast GPP diode
1N4370D Leshan Radio2.4 V, 20 mA, zener diode
05WS30 Leshan Radio400 mW, 2 mA, zener diode
M02 Leshan Radio100 V, 1 A, glass passivated SMA diode
1N5256A Leshan Radio30 V, 4.2 mA, zener diode

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