F1060 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1060 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 2

Température : Min -65 °C | Max 150 °C

Taille : 41 KB

Application : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor