F1066 spec: 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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F1066 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 8

Température : Min -65 °C | Max 150 °C

Taille : 42 KB

Application : 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor