F1069 spec: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1069 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 2

Température : Min -65 °C | Max 150 °C

Taille : 39 KB

Application : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor