Chemin:okDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IR-78
0 ST333C08LHK2 ST2100C32R2 SD200R12MSC SD253N04S20PBV SD253R14S20PV ST2600C28R3L IRFU210 IRFI620G SD600N16MC ST183S04MFN1 SD300R16MSV SD600R20MTC IRF9140 SD303C12S20C IR2110-1 303UR200P4 IRF820S SD400R04MC SD203N16S10MBV 72UFR160APD SD203R16S10MSV IRFBA1405P 305U160P2 SD103N12S20
Partie n | Fabricant | Application |
---|---|---|
ST280S04M1V | IR | Phase control thyristor |
IR51HD420 | IR | Self-oscillating half-bridge |
ST333C08LHK2 | IR | Inverter grade thyristor |
ST2100C32R2 | IR | Phase control thyristor |
SD200R12MSC | IR | Standard recovery diode |
SD253N04S20PBV | IR | Fast recovery diode |
SD253R14S20PV | IR | Fast recovery diode |
ST2600C28R3L | IR | Phase control thyristor |
IRFU210 | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A |
IRFI620G | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 4 .1 A |
SD600N16MC | IR | Standard recovery diode |
ST183S04MFN1 | IR | Inverter grade thyristor |
SD300R16MSV | IR | Standard recovery diode |
SD600R20MTC | IR | Standard recovery diode |
IRF9140 | IR | HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A |
SD303C12S20C | IR | Fast recovery diode |
IR2110-1 | IR | High and low side driver |
303UR200P4 | IR | Standard recovery diode |
IRF820S | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A |
SD400R04MC | IR | Standard recovery diode |
SD203N16S10MBV | IR | Fast recovery diode |
72UFR160APD | IR | Standard recovery diode |
SD203R16S10MSV | IR | Fast recovery diode |
IRFBA1405P | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.0mOhm, ID = 174A |
305U160P2 | IR | Standard recovery diode |
SD103N12S20PC | IR | Fast recovery diode |
PVT322A | IR | HEXFET power MOSFET photovoltaic relay |
ST223S04PFN1L | IR | Inverter grade thyristor |
47LF | IR | Standard recovery diode |
20ETS16STRR | IR | Surface mountable input rectifier diode |