| Partie n | Fabricant | Application |
|---|
| 309URA250P4 | IR | Standard recovery diode |
| IRLR120NTRL | IR | N-channel power MOSFET, 100V, 10A |
| SD253N16S20PBV | IR | Fast recovery diode |
| SD600N08PSC | IR | Standard recovery diode |
| 110RKI120 | IR | Phase control thyristor |
| ST700C22L3 | IR | Phase control thyristor |
| SD453N25S30MTC | IR | Fast recovery diode |
| SD453N12S30PSC | IR | Fast recovery diode |
| 130HF80MSV | IR | Standard recovery diode |
| ST333C08CHK2L | IR | Inverter grade thyristor |
| SD150R14PSC | IR | Standard recovery diode |
| SD150R16PSV | IR | Standard recovery diode |
| IRFD420 | IR | HEXFET power MOSFET |
| ST333C04CHK2 | IR | Inverter grade thyristor |
| SD200N20PC | IR | Standard recovery diode |
| 303UA80P2 | IR | Standard recovery diode |
| SD103R25S20MBC | IR | Fast recovery diode |
| IRFR9120N | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A |
| 302UFR160APD | IR | Standard recovery diode |
| SD253R04S20MV | IR | Fast recovery diode |
| SD103R04S10MC | IR | Fast recovery diode |
| IRG4BC20FD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A |
| SD1053C25S30L | IR | Fast recovery diode |
| SD453N20S30PC | IR | Fast recovery diode |
| IRFU9220 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A |
| SD150R04MSC | IR | Standard recovery diode |
| IRFU9214 | IR | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ohm, ID = -2.7A |
| ST1900C48R0 | IR | Phase control thyristor |
| ST280S06P0V | IR | Phase control thyristor |
| IRFP450LC | IR | HEXFET power mosfet |
