Chemin:okDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IR-83
0PV 309U200P3 SD203N25S10MC SD200N16MBV 200HFR80MSV ST300C20L3L IRFU9210 ST180C04C1L ST083S08PFK1L SD150R16PV IRHNA7260 IRFU214 SD110OC32C ST330C14C0 ST1200C14K2 303URA200P3 IRFBC30A ST280S04M0VL 305UA250P2 SD203N10S15MBC 200HF120PSV IRFZ44NS SD603C12S15C SD203N20S20MSC IRFPG50 S
Partie n | Fabricant | Application |
---|---|---|
SD40OC08C | IR | Standard recovery diode |
SD203N16S10PV | IR | Fast recovery diode |
309U200P3 | IR | Standard recovery diode |
SD203N25S10MC | IR | Fast recovery diode |
SD200N16MBV | IR | Standard recovery diode |
200HFR80MSV | IR | Standard recovery diode |
ST300C20L3L | IR | Phase control thyristor |
IRFU9210 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.9A |
ST180C04C1L | IR | Phase control thyristor |
ST083S08PFK1L | IR | Inverter grade thyristor |
SD150R16PV | IR | Standard recovery diode |
IRHNA7260 | IR | HEXFET transistor |
IRFU214 | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A |
SD110OC32C | IR | Standard recovery diode |
ST330C14C0 | IR | Phase control thyristor |
ST1200C14K2 | IR | Phase control thyristor |
303URA200P3 | IR | Standard recovery diode |
IRFBC30A | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A |
ST280S04M0VL | IR | Phase control thyristor |
305UA250P2 | IR | Standard recovery diode |
SD203N10S15MBC | IR | Fast recovery diode |
200HF120PSV | IR | Standard recovery diode |
IRFZ44NS | IR | Power MOSFET, 55V, 59A |
SD603C12S15C | IR | Fast recovery diode |
SD203N20S20MSC | IR | Fast recovery diode |
IRFPG50 | IR | HEXFET power MOSFET. VDSS = 1000 V, RDS(on) = 2.0 Ohm, ID = 6.1 A |
ST303C08LHK1 | IR | Inverter grade thyristor |
IRFR214 | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A |
SD603C04S10C | IR | Fast recovery diode |
ST303C04CHK1 | IR | Inverter grade thyristor |