| Partie n | Fabricant | Application |
|---|
| ST280C06C2L | IR | Phase control thyristor |
| SD233N45S50MC | IR | Fast recovery diode |
| IRGBC30MD2-S | IR | Insulated gate bipolar transistor with ultrafast soft reconery diode |
| SD150R14MBC | IR | Standard recovery diode |
| IRF3710S | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A |
| SD453R16S20PSC | IR | Fast recovery diode |
| 300U10A | IR | Standard recovery diode |
| SD203N14S10PC | IR | Fast recovery diode |
| SD203N04S20PBC | IR | Fast recovery diode |
| 130HF40MBV | IR | Standard recovery diode |
| ST173S10PFK2 | IR | Inverter grade thyristor |
| 200HF40PBV | IR | Standard recovery diode |
| SD500N30PC | IR | Standard recovery diode |
| IRF9130 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A |
| SD150R25MSC | IR | Standard recovery diode |
| IR2113S | IR | High and low side driver |
| SD300OC10K | IR | Standard recovery diode |
| IRU1206-18CD | IR | 1A very low dropout positive fixed 1.8V regulator |
| ST300C20C0L | IR | Phase control thyristor |
| SD803C16S15C | IR | Fast recovery diode |
| IR51H320 | IR | Self-oscillating half-bridge |
| IRFBA22N50A | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 24A |
| IRFU9120N | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A |
| 4730 | IR | Standard recovery diode |
| 305URA120P4 | IR | Standard recovery diode |
| IRG4PH50KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A |
| IRF7103Q | IR | N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A |
| IRF723 | IR | N-channel HEXFET, 350V, 2.8A |
| SD103N08S20PSC | IR | Fast recovery diode |
| SD153R16S15PV | IR | Fast recovery diode |
