Chemin:OKDatasheet > Fiche de Semi-conducteurs > IR Datasheet
Mot-clé: Datasheet IR, Data sheet IR, Data sheets IR, International Rectifier
Chemin:OKDatasheet > Fiche de Semi-conducteurs > IR Datasheet
Mot-clé: Datasheet IR, Data sheet IR, Data sheets IR, International Rectifier
Pour trouver les International RectifierFiche d'information, de recherche okDatasheet par le numéro de pièce ou élément de description. Vous seront présentés avec une liste de toutes les parties correspondant aux fiches IR. Cliquez sur une liste de composants électroniques pour voir plus de détails y compris les spécifications.
IR site officiel
Partie n | Application |
---|---|
45LR100 | Standard recovery diode |
ST180S04P2L | Phase control thyristor |
SD150N12PBC | Standard recovery diode |
SD203N12S15MBC | Fast recovery diode |
SD600R32MTC | Standard recovery diode |
SD153R14S10MV | Fast recovery diode |
307U80P5 | Standard recovery diode |
IRFP048N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.016 Ohm, ID = 64A |
301UA120P5 | Standard recovery diode |
45L40 | Standard recovery diode |
309UA250P4 | Standard recovery diode |
ST330S16M3L | Phase control thyristor |
SD103N12S15MSC | Fast recovery diode |
IRF640NSTR | N-channel power MOSFET for fast switching applications, 200V, 18A |
SD153R14S15MV | Fast recovery diode |
SD303C25S10C | Fast recovery diode |
SD103N25S20MSC | Fast recovery diode |
ST110S12P1VL | Phase control thyristor |
IRFI730G | 400V HEXFET power MOSFET |
SD453R20S20MTC | Fast recovery diode |
300U100A | Standard recovery diode |
SD80OC24L | Standard recovery diode |
300UF120APD | Standard recovery diode |
ST280CH06C0 | Phase control thyristor |
305U250P4 | Standard recovery diode |
SD153R14S15PSV | Fast recovery diode |
IRFNG40 | HEXFET power mosfet |
110RKI40S90 | Phase control thyristor |
International Rectifier Corporation is a major woldwide supplier of power semiconductors, which convert electrical energy to operate power supplies, motor drives, lighting ballasts, and battery operated equipment. Its patented HEXFET? power MOSFETs and IGBTs make IR the world leader in field effect transistors. IR technological advances improve the performance and energy efficiency of electronic and electrical equipment in automotive, consumer, computer/peripheral, industrial, lighting, telecom, and government/space applications.
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